[1]
Sultanov A.M., Abdukarimov A.A., Bozorov X.N., Boqiyev S.B., and Soatillayev A.U., “INVESTIGATION OF THE EFFECT OF Mn IMPURTTY ON HIGH-VOLTAGE p0-n0 HETEROJUNCTIONS BASED ON A LOW-DOPED GaAs LAYER”,
new, vol. 67, no. 1, pp. 102–113, Dec. 2024, Accessed: May 29, 2025. [Online]. Available:
https://scientific-jl.org/new/article/view/5930