THE EFFECT OF TEMPERATURE ON THE VOLTAGE-AMPERE CHARACTERISTICS OF SILICON-BASED SEMICONDUCTOR MATERIALS
Ключевые слова:
Temperature effect, current-voltage characteristics, silicon semiconductor, thermal behavior, electronic devices.Аннотация
The effect of temperature on the current-voltage (I-V) characteristics of silicon-based semiconductor materials is a critical factor influencing their performance in electronic applications. This study explores the temperature-dependent behavior of the I-V curve, highlighting key phenomena such as carrier mobility, bandgap narrowing, and thermal generation of charge carriers. Experimental data and theoretical analysis are combined to provide insights into optimizing semiconductor devices for various temperature ranges.
Библиографические ссылки
References
1. Sze, S. M., & Ng, K. K. (2006). Physics of Semiconductor Devices (3rd ed.). Wiley-Interscience.
2. Neamen, D. A. (2012). Semiconductor Physics and Devices: Basic Principles (4thed.).McGraw-Hill.
3. Shockley, W. (1952). "The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors." Bell System Technical Journal, 28(3), 435–489.
4. Streetman, B. G., & Banerjee, S. K. (2000). Solid State Electronic Devices (6th ed.). Prentice-Hall.
5. Baliga, B. J. (2019). Power Semiconductor Devices (2nd ed.).
6. Mandel, L., & Wolf, E. (1995). Optical Coherence and Quantum Optics. Cambridge University Press.
7. Pierret, R. F. (2003). Semiconductor Device Fundamentals. Addison-Wesley.
8. Rathi, A. (2017). "Temperature Dependence of Silicon Semiconductor Properties." International Journal of Electronics and Communication Engineering & Technology (IJECET), 8(6), 10-18.
9. Adilova Xalida Shamshetdin qızı, Akimbaev Ruslan Farxodovich, O'rinbayev Sharofiddin Maksudbay o'g'li “SIGNIFICANCE OF SEMICONDUCTORS IN MODERN USE”
